BFP640E6327 RF Bipolar Transistors GP BJT NPN 4V 0.05A NPN 4V 0.05A

BFP640E6327 RF Bipolar Transistors GP BJT NPN 4V 0.05A NPN 4V 0.05A

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Product Details
UPC: BFP640E6327
Brand: Infineon

BFP640E6327 RF Bipolar Transistors GP BJT NPN 4V 0.05A NPN 4V 0.05A

Manufacturer: Infineon
Product Category: RF Bipolar Transistors
RoHS: Details
Transistor Type: Bipolar
Technology: SiGe
Transistor Polarity: NPN
Operating Frequency: 40000 MHz
Collector- Emitter Voltage VCEO Max: 4 V
Emitter- Base Voltage VEBO: 1.2 V
Continuous Collector Current: 50 mA
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Configuration: Single

Mounting Style: SMD/SMT

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BFP640E6327 RF Bipolar Transistors GP BJT NPN 4V 0.05A NPN 4V 0.05A
Store / Surplus electronic components / Transistors
Display prices in: GBP