ONSEMI FDC658P MOSFET SSOT-6 P-CH -30V

ONSEMI FDC658P MOSFET SSOT-6 P-CH -30V

Store / Surplus electronic components / Semiconductors
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Product Details

Technology: Si

Mounting Style: SMD/SMT
Package/Case: SSOT-6
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 50 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 12 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.6 W
Channel Mode: Enhancement
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ONSEMI FDC658P MOSFET SSOT-6 P-CH -30V
Store / Surplus electronic components / Semiconductors
Display prices in: GBP