Toshiba SSM6N56FE,LM MOSFET Small-signal MOSFET N-Channel

Toshiba SSM6N56FE,LM MOSFET Small-signal MOSFET N-Channel

Store / Surplus electronic components / Mosfet
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Product Details

Technology: Si

Mounting Style: SMD/SMT
Package/Case: ES6-6
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 800 mA
Rds On - Drain-Source Resistance: 235 mOhms, 235 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
Qg - Gate Charge: 1 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 250 mW
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Toshiba SSM6N56FE,LM MOSFET Small-signal MOSFET N-Channel
Store / Surplus electronic components / Mosfet
Display prices in: GBP